SIM75D06AV1 preliminary feature ? 4 n b s u g j f m e t u p q q f s 5 s f o d i design technology ? low v ce (sat) ? low turn-off losses ? short tail current for over 20khz applications ? motor controls ? vvvf inverters ? inverter-type welding mc over 18khz ? smps, electrolysis ? ups/eps, robotics package : v1 ?half-bridge? igbt module absolute maximum ratings @ tj=25 ? (per leg) symbol parameter condition ratings unit v ces collector-to-emitter voltage t c = ? 600 v v ges gate emitter voltage ? 20 v i c continuous collector current t c = 80 ? ?
75 (100) a i cp pulsed collector current t c = ? 140 a i f diode continuous forward current t c = 80 ? ?
75 (100) a i fm diode maximum forward current t c = ? 140 a t p short circuit test, v ge = 15v, v cc = 360v t c = 150 ? ?
6 (8) k v iso isolation voltage test ac @ 1 minute 2500 v tj junction temperature -40 ~ 150 ? tstg storage temperature -40 ~ 125 ? weight weight of module 190 g md mounting torque with screw : m5 2.0 n.m terminal connection torque : m5 2.0 n.m static characteristics @ tj = 25 ? (unless otherwise specified) parameters min typ max unit test conditions v ce(on) collector-to-emitter saturation voltage 1.50 v i c = 75a , v ge = 15v v ge(th) gate threshold voltage 5.8 v ce = v ge, i c = 4 v i ces zero gate voltage collector current ? ? 5.0 v v ge = 0v, v ce = 600v i ges gate-to-emitter leakage current ? ? 400 t v ce = 0v, v ge = v v f diode forward voltage drop ? 1.6 2.0 v i f = 75a, v ge = 0v r gint integrated gate resistor ? 4 ? ? v ces = 600v ic= 75a v ce(on) typ. = 1.5v @ic= 75a
SIM75D06AV1 preliminary electrical characteristi c values (igbt / diode) @ tj = 25 ? (unless otherwise specified) parameters min typ max unit test conditions c iss input capacitance ? 4700 ? pf v ce = 25v , v ge = v f = 1 mhz c oss output capacitance ? 300 ? c rss reverse transfer capacitance ? 145 ? t d(on) turn-on delay time ? 25 ? ns inductive switching (125 ?
v cc = 300v i c = 75a, v ge = ? 15v r g = 1.2 ? t r rise time ? 18 ? t d(off) turn-off delay time ? 210 ? t f fall time ? 60 ? v rrm maximum peak repetitive reverse voltage 600 ? ? v i rm maximum reverse leakage current ? ? 250 u v r = 600v t rr reverse recovery time ? 125 ? o t i f = 75a, v r = 300v di / dt = 2000a / k q rr reverse recovery charge ? 7.6 ? c thermal characteristics symbol parameter min typ max unit r jc junction-to-case (igbt par t, per 1/2 module) - - 0.60 ? /w r jc junction-to-case (diode par t, per 1/2 module) - - 0.98 r cs case-to-heat sink (conductive grease applied) - 0.05 - ? % b u b b o e specifications t v c k f d u u p d i b o h f x j u i p v u o p u j d f
SIM75D06AV1 preliminary fig 1. typ. igbt output characteristics fig 2. typ. igbt out characteristics fig 3. typ. transfer characteristics fig 4. reverse bias operating area fig 5. forward characteristics of diode fig 6. operating frequency vs collector current
SIM75D06AV1 preliminary june 2008 headquarter: #602, b/d, 402 bld, blk4, techno-park, wonmi-gu, bucheon-city, s.korea tel)+82-32-234-4781, fax)+82-32-234-4789 package outline (dimensions in mm) sales & marketing clzhang@semwiell.com sales@semiwell.com
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